Writing on Dirty Memory

Non-volatile memories (NVM) including flash memories and resistive memories have attracted significant interest as data storage media. Flash memories are widely employed in mobile devices and solid-state drives (SSD). Resistive memories are promising as storage class memory and embedded memory applications. Data reliability is the fundamental requirement of NVM as data storage media. However, modern nano-scale NVM suffers from challenges of inter-cell interference (ICI), charge leakage, and write endurance, which threaten the reliability of stored data. In order to cope with these adverse effects, advanced coding techniques including soft decision decoding have been investigated actively. However, current coding techniques do not capture the physical properties of NVM well, so the improvement of data reliability is limited. Although soft decision decoding improves the data reliability by using soft decision values, it degrades read speed performance due to multiple read operations needed to obtain soft decision values. In this dissertation, we explore coding schemes that use side information corresponding to the physical phenomena to improve the data reliability significantly. The side information is obtained before writing data into memory and incorporated during the encoding stage. Hence, the proposed coding schemes maintain the read speed whereas the write speed performance would be degraded. It is a big advantage from the perspective of speed performance since the read speed is more critical than the write speed in many memory applications. First, this dissertation investigates the coding techniques for memory with stuckat defects. The idea of coding techniques for memory with stuck-at defects is employed to handle critical problems of flash memories and resistive memories. For 2D planar flash memories, we propose a coding scheme that combats the ICI, which is a primary challenge of 2D planar flash memories. Also, we propose a coding scheme that reduces the effect of fast detrapping, a degradation factor in 3D vertical flash memories. Finally, we investigate the coding techniques that improve write endurance and power consumption of resistive memories.